🎓 About Me

I will be a Postdoctoral Fellow at The Chinese University of Hong Kong (Apr. 2026), working with Prof. Bei Yu. I obtained my Ph.D. degree in Microelectronics from Purdue University (2023) and B.S. degree in Applied Physics from University of Sicence and Technology of China (2018). Before joining CUHK, I was a Senior Device Engineer at HiSilicon.

🔬 Research Interests

  • AI for DTCO
  • Semiconductor Devices
  • Chip Manufacturing
  • Design Automation

🔥 News

[2026.04] Join CUHK as a Postdoctoral Fellow.

📝 Selected Publications

(See Google Scholar for full list)

Conference Proceedings

  1. Z. Zhang, Z. Lin, C. Niu, M. Si, M. A. Alam and P. D. Ye, “Ultrahigh Bias Stability of ALD In2O3 FETs Enabled by High Temperature O2 Annealing,” in IEEE Symposia on VLSI Technology and Circuits (VLSI), 2023.
  2. Z. Zhang, Z. Lin, A. Charnas, H. Dou, Z. Shang, J. Zhang, M. Si, H. Wang, M. A. Alam and P. D. Ye, “Reliability of Atomic-Layer-Deposited Gate-All-Around In2O3 Nano-Ribbon Transistors with Ultra-High Drain Currents,” in IEEE International Electron Devices Meeting (IEDM), 2022.
  3. Z. Lin, Z. Zhang, C. Niu, H. Dou, K. Xu, M. Islam, J.-Y. Lin, C. Sung, M. Hong, D. Ha, H. Wang, M. A. Alam and P. D. Ye, “Highly Robust All-Oxide Transistors with Ultrathin In2O3 as Channel and Thick In2O3 as Metal Gate Towards Vertical Logic and Memory,” in IEEE Symposia on VLSI Technology and Circuits (VLSI), 2024.
  4. J. Zhang, Z. Zhang, H. Dou, Z. Lin, K. Xu, W. Yang, X. Zhang, H. Wang and P. D. Ye, “Fluorine Anion-Doped Ultra-Thin InGaO Transistors Overcoming Mobility-Stability Trade-off,” in IEEE International Electron Devices Meeting (IEDM), 2023.
  5. J.-Y. Lin, Z. Zhang, S. Alajlouni, P.-Y. Liao, Z. Lin, C. Niu, A. Shakouri and P. D. Ye, “First Determination of Thermal Resistance and Thermal Capacitance of Atomic-Layer-Deposited In2O3 Transistors,” in IEEE International Electron Devices Meeting (IEDM), 2023.

Journal Articles

  1. Z. Zhang, Z. Lin, P.-Y. Liao, V. Askarpour, H. Dou, Z. Shang, A. Charnas, M. Si, S. Alajlouni, A. Shakouri, H. Wang, M. Lundstrom, J. Maassen and P. D. Ye, “A Gate-All-Around In2O3 Nanoribbon FET with Near 20 mA/um Drain Current,” IEEE Electron Device Letters, vol. 43, no. 11, pp. 1905-1908, 2022.
  2. Z. Zhang, Z. Lin, M. Si, D. Zhang, H. Dou, Z. Chen, A. Charnas, H. Wang and P. D. Ye, “Vertically Stacked Multilayer Atomic-layer-deposited Sub-1-nanometer In2O3 Field-effect Transistors with Back-end-of-line Compatibility,” Applied Physics Letters, vol. 120, no. 20, p. 202104, 2022.
  3. Z. Zhang, Y. Hu, Z. Lin, M. Si, A. Charnas, K. Cho and P. D. Ye, “Atomically Thin Indium-Tin-Oxide Transistors Enabled by Atomic Layer Deposition,” IEEE Transactions on Electron Devices, vol. 69, no. 1, pp. 231-236, 2022.
  4. J.-Y. Lin, Z. Zhang, Z. Lin, C. Niu, Y. Zhang, Y. Zhang, T. Kim, H. Jang, C. Sung, M. Hong, S. Lee, T. Lee, M. Cho, D. Ha, C. Jeong, H. Wang, M. A. Alam, and P. D. Ye, “First Demonstration of Top-Gate Enhancement-Mode ALD In2O3 FETs with High Thermal Budget of 600°C for DRAM Applications,” IEEE Electron Device Letters, vol. 45, no. 10, pp. 1851-1854, 2024.
  5. A. Charnas, Z. Zhang, Z. Lin, D. Zheng, J. Zhang, M. Si and P. D. Ye, “Extremely Thin Amorphous Indium Oxide Transistors,” Advanced Materials, vol. 36, no. 9, p. 2304044, 2024.
  6. C. Niu, Z. Zhang, D. Graf, S. Lee, M. Wang, W. Wu, T. Low and P. D. Ye, “High-pressure Induced Weyl Semimetal Phase in 2D Tellurium,” Communications Physics, vol. 6, no. 1, p.345, 2023.
  7. M. Si, Z. Zhang, S.-C. Chang, N. Haratipour, D. Zheng, J. Li, U. E. Avci and P. D. Ye “Asymmetric Metal/a-In2Se3/Si Crossbar Ferroelectric Semiconductor Junction,” ACS Nano, vol. 15, no. 3, pp. 5689-5695, 2021.